2SK879-Y(TE85L,F)

Manufacturer Part 2SK879-Y(TE85L,F)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description JFET N-CH 0.1W USM
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet 2SK879-Y(TE85L,F) PDF
Availability 444 pieces
Shipped from HK warehouse
Expected Shipping Dec 05 - Dec 09 2024
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):-
Drain to Source Voltage (Vdss):-
Current - Drain (Idss) @ Vds (Vgs=0):1.2 mA @ 10 V
Current Drain (Id) - Max:-
Voltage - Cutoff (VGS off) @ Id:400 mV @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds:8.2pF @ 10V
Resistance - RDS(On):-
Power - Max:100 mW
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:USM
More Information
2SK879-Y(TE85L,F)
2SK879-Y(TE85L,F)
Toshiba Electronic Devices and Storage Corporation 2SK879-Y(TE85L,F) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
2SK879-Y(TE85L,F) PDF
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