| Manufacturer Part | MSRT20060(A)D |
|---|---|
| Manufacturer | GeneSiC Semiconductor |
| Description | DIODE GEN PURP 600V 200A 3 TOWER |
| Category | Discrete Semiconductor |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Availability | 0 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Dec 23 - Dec 27 2024 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Series Connection |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600 V |
| Current - Average Rectified (Io) (per Diode): | 200A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 200 A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Three Tower |
| Supplier Device Package: | Three Tower |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
DIODE GEN PURP 600V 200A 3 TOWER
