Manufacturer Part | A2G35S200-01SR3 |
---|---|
Manufacturer | NXP Semiconductors |
Description | AIRFAST RF POWER GAN TRANSISTOR |
Category | Discrete Semiconductor |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Datasheet | A2G35S200-01SR3 PDF |
Availability | 182 pieces |
Shipped from | HK warehouse |
Expected Shipping | Dec 25 - Dec 29 2024 |
In Stock Min.: 1 Mult.: 1
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Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Transistor Type: | GaN HEMT |
Frequency: | 3.4GHz ~ 3.6GHz |
Gain: | 16.1dB |
Voltage - Test: | 48 V |
Current Rating (Amps): | - |
Noise Figure: | - |
Current - Test: | 291 mA |
Power - Output: | 180W |
Voltage - Rated: | 125 V |
Package / Case: | NI-400S-2S |
Supplier Device Package: | NI-400S-2S |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |