A2G35S200-01SR3

Manufacturer Part A2G35S200-01SR3
Manufacturer NXP Semiconductors
Description AIRFAST RF POWER GAN TRANSISTOR
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet A2G35S200-01SR3 PDF
Availability 182 pieces
Shipped from HK warehouse
Expected Shipping Dec 16 - Dec 20 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:GaN HEMT
Frequency:3.4GHz ~ 3.6GHz
Gain:16.1dB
Voltage - Test:48 V
Current Rating (Amps):-
Noise Figure:-
Current - Test:291 mA
Power - Output:180W
Voltage - Rated:125 V
Package / Case:NI-400S-2S
Supplier Device Package:NI-400S-2S
More Information
A2G35S200-01SR3
A2G35S200-01SR3
NXP Semiconductors A2G35S200-01SR3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
A2G35S200-01SR3 PDF
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A2G35S200-01SR3
A2G35S200-01SR3
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DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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