| Manufacturer Part | A2G35S200-01SR3 |
|---|---|
| Manufacturer | NXP Semiconductors |
| Description | AIRFAST RF POWER GAN TRANSISTOR |
| Category | Discrete Semiconductor |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Datasheet | A2G35S200-01SR3 PDF |
| Availability | 182 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Nov 24 - Nov 28 2024 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| Transistor Type: | GaN HEMT |
| Frequency: | 3.4GHz ~ 3.6GHz |
| Gain: | 16.1dB |
| Voltage - Test: | 48 V |
| Current Rating (Amps): | - |
| Noise Figure: | - |
| Current - Test: | 291 mA |
| Power - Output: | 180W |
| Voltage - Rated: | 125 V |
| Package / Case: | NI-400S-2S |
| Supplier Device Package: | NI-400S-2S |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
AIRFAST RF POWER GAN TRANSISTOR
