MT3S113P(TE12L,F)

Manufacturer Part MT3S113P(TE12L,F)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet MT3S113P(TE12L,F) PDF
Availability 1818 pieces
Shipped from HK warehouse
Expected Shipping Nov 26 - Nov 30 2024
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):5.3V
Frequency - Transition:7.7GHz
Noise Figure (dB Typ @ f):1.45dB @ 1GHz
Gain:10.5dB
Power - Max:1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PW-MINI
More Information
MT3S113P(TE12L,F)
MT3S113P(TE12L,F)
Toshiba Electronic Devices and Storage Corporation MT3S113P(TE12L,F) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
MT3S113P(TE12L,F) PDF
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DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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