RFN30TS6SGC11

Manufacturer Part RFN30TS6SGC11
Manufacturer ROHM Semiconductor
Description DIODE GEN PURP 600V 30A TO247
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet RFN30TS6SGC11 PDF
Availability 37 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:1.55 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:-
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247
Operating Temperature - Junction:150°C (Max)
More Information
RFN30TS6SGC11
RFN30TS6SGC11
ROHM Semiconductor RFN30TS6SGC11 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
RFN30TS6SGC11 PDF
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DIODE GEN PURP 600V 30A TO247

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