NSB8JTHE3_A/P

Manufacturer Part NSB8JTHE3_A/P
Manufacturer Vishay General Semiconductor – Diodes Division
Description DIODE GEN PURP 600V 8A TO263AB
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet NSB8JTHE3_A/P PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:Automotive, AEC-Q101
Package:Tube
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 8 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:55pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB
Operating Temperature - Junction:-55°C ~ 150°C
More Information
NSB8JTHE3_A/P
NSB8JTHE3_A/P
Vishay General Semiconductor – Diodes Division NSB8JTHE3_A/P is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
NSB8JTHE3_A/P PDF
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