Manufacturer Part | UGB8JT-E3/45 |
---|---|
Manufacturer | Vishay General Semiconductor – Diodes Division |
Description | DIODE GEN PURP 600V 8A TO263AB |
Category | Discrete Semiconductor |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Datasheet | UGB8JT-E3/45 PDF |
Availability | 0 pieces |
Shipped from | HK warehouse |
Expected Shipping | Dec 19 - Dec 23 2024 |
In Stock Min.: 1 Mult.: 1
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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.75 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 30 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -55°C ~ 150°C |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |