TPAR3J S1G

Manufacturer Part TPAR3J S1G
Manufacturer TSC (Taiwan Semiconductor)
Description DIODE AVALANCHE 600V 3A TO277A
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TPAR3J S1G PDF
Availability 2962 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Avalanche
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.55 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):120 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:58pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-277, 3-PowerDFN
Supplier Device Package:TO-277A (SMPC)
Operating Temperature - Junction:-55°C ~ 175°C
More Information
TPAR3J S1G
TPAR3J S1G
TSC (Taiwan Semiconductor) TPAR3J S1G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TPAR3J S1G PDF
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DIODE AVALANCHE 600V 3A TO277A

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