HGTD1N120BNS9A

Manufacturer Part HGTD1N120BNS9A
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description IGBT 1200V 5.3A 60W TO252AA
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet HGTD1N120BNS9A PDF
Availability 7588 pieces
Shipped from HK warehouse
Expected Shipping Dec 19 - Dec 23 2024
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):5.3 A
Current - Collector Pulsed (Icm):6 A
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 1A
Power - Max:60 W
Switching Energy:70µJ (on), 90µJ (off)
Input Type:Standard
Gate Charge:14 nC
Td (on/off) @ 25°C:15ns/67ns
Test Condition:960V, 1A, 82Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252AA
More Information
HGTD1N120BNS9A
HGTD1N120BNS9A
Sanyo Semiconductor/ON Semiconductor HGTD1N120BNS9A is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
HGTD1N120BNS9A PDF
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