FGB7N60UNDF

Manufacturer Part FGB7N60UNDF
Manufacturer Rochester Electronics
Description INSULATED GATE BIPOLAR TRANSISTO
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet FGB7N60UNDF PDF
Availability 994 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):14 A
Current - Collector Pulsed (Icm):21 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 7A
Power - Max:83 W
Switching Energy:99µJ (on), 104µJ (off)
Input Type:Standard
Gate Charge:18 nC
Td (on/off) @ 25°C:5.9ns/32.3ns
Test Condition:400V, 7A, 10Ohm, 15V
Reverse Recovery Time (trr):32.3 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
More Information
FGB7N60UNDF
FGB7N60UNDF
Rochester Electronics FGB7N60UNDF is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
FGB7N60UNDF PDF
Same Series
FGB7N60UNDF
FGB7N60UNDF
INSULATED GATE BIPOLAR TRANSISTO
Rochester Electronics
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Payment
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Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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