HGTG11N120CND

Manufacturer Part HGTG11N120CND
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description IGBT NPT 1200V 43A TO247-3
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet HGTG11N120CND PDF
Availability 34 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Not For New Designs
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):43 A
Current - Collector Pulsed (Icm):80 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 11A
Power - Max:298 W
Switching Energy:950µJ (on), 1.3mJ (off)
Input Type:Standard
Gate Charge:100 nC
Td (on/off) @ 25°C:23ns/180ns
Test Condition:960V, 11A, 10Ohm, 15V
Reverse Recovery Time (trr):70 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
More Information
HGTG11N120CND
HGTG11N120CND
Sanyo Semiconductor/ON Semiconductor HGTG11N120CND is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
HGTG11N120CND PDF
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