HGTP5N120BND

Manufacturer Part HGTP5N120BND
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description IGBT 1200V 21A 167W TO220AB
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet HGTP5N120BND PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 23 - Dec 27 2024
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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Not For New Designs
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):21 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 5A
Power - Max:167 W
Switching Energy:450µJ (on), 390µJ (off)
Input Type:Standard
Gate Charge:53 nC
Td (on/off) @ 25°C:22ns/160ns
Test Condition:960V, 5A, 25Ohm, 15V
Reverse Recovery Time (trr):65 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
More Information
HGTP5N120BND
HGTP5N120BND
Sanyo Semiconductor/ON Semiconductor HGTP5N120BND is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
HGTP5N120BND PDF
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