TPN1110ENH,L1Q

Manufacturer Part TPN1110ENH,L1Q
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 200V 7.2A 8TSON
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TPN1110ENH,L1Q PDF
Availability 4190 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:114mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 100 V
FET Feature:-
Power Dissipation (Max):700mW (Ta), 39W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN
More Information
TPN1110ENH,L1Q
TPN1110ENH,L1Q
Toshiba Electronic Devices and Storage Corporation TPN1110ENH,L1Q is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TPN1110ENH,L1Q PDF
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