TK31N60W,S1VF

Manufacturer Part TK31N60W,S1VF
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N CH 600V 30.8A TO247
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TK31N60W,S1VF PDF
Availability 48 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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Product Attributes
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:88mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id:3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 300 V
FET Feature:Super Junction
Power Dissipation (Max):230W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
More Information
TK31N60W,S1VF
TK31N60W,S1VF
Toshiba Electronic Devices and Storage Corporation TK31N60W,S1VF is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TK31N60W,S1VF PDF
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MOSFET N CH 600V 30.8A TO247

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