TJ8S06M3L(T6L1,NQ)

Manufacturer Part TJ8S06M3L(T6L1,NQ)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET P-CH 60V 8A DPAK
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TJ8S06M3L(T6L1,NQ) PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:U-MOSVI
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:104mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 10 V
FET Feature:-
Power Dissipation (Max):27W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK+
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
More Information
TJ8S06M3L(T6L1,NQ)
TJ8S06M3L(T6L1,NQ)
Toshiba Electronic Devices and Storage Corporation TJ8S06M3L(T6L1,NQ) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TJ8S06M3L(T6L1,NQ) PDF
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