TP2635N3-G

Manufacturer Part TP2635N3-G
Manufacturer Roving Networks / Microchip Technology
Description MOSFET P-CH 350V 180MA TO92-3
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TP2635N3-G PDF
Availability 98 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):350 V
Current - Continuous Drain (Id) @ 25°C:180mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:15Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
More Information
TP2635N3-G
TP2635N3-G
Roving Networks / Microchip Technology TP2635N3-G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TP2635N3-G PDF
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