| Manufacturer Part | SCTW100N65G2AG |
|---|---|
| Manufacturer | STMicroelectronics |
| Description | SICFET N-CH 650V 100A HIP247 |
| Category | Discrete Semiconductor |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Availability | 1549 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Nov 26 - Nov 30 2024 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101 |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 650 V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 18V |
| Rds On (Max) @ Id, Vgs: | 26mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id: | 5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 162 nC @ 18 V |
| Vgs (Max): | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3315 pF @ 520 V |
| FET Feature: | - |
| Power Dissipation (Max): | 420W (Tc) |
| Operating Temperature: | -55°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | HiP247™ |
| Package / Case: | TO-247-3 |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
SICFET N-CH 650V 100A HIP247
