PHD101NQ03LT,118

Manufacturer Part PHD101NQ03LT,118
Manufacturer Rochester Electronics
Description POWER FIELD-EFFECT TRANSISTOR, 7
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet PHD101NQ03LT,118 PDF
Availability 4000 pieces
Shipped from HK warehouse
Expected Shipping Dec 01 - Dec 05 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:TrenchMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.18 pF @ 25 V
FET Feature:-
Power Dissipation (Max):166W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
More Information
PHD101NQ03LT,118
PHD101NQ03LT,118
Rochester Electronics PHD101NQ03LT,118 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
PHD101NQ03LT,118 PDF
Same Series
PHD108NQ03LT,118
PHD108NQ03LT,118
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Payment
Payment method Hand Fee
Telegraphic Transfer Request service
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Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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