BSB028N06NN3GXUMA1

Manufacturer Part BSB028N06NN3GXUMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 60V 22A/90A 2WDSON
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BSB028N06NN3GXUMA1 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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Product Attributes
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 102µA
Gate Charge (Qg) (Max) @ Vgs:143 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12000 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta), 78W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON
More Information
BSB028N06NN3GXUMA1
BSB028N06NN3GXUMA1
IR (Infineon Technologies) BSB028N06NN3GXUMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BSB028N06NN3GXUMA1 PDF
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