TPH6R30ANL,L1Q

Manufacturer Part TPH6R30ANL,L1Q
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 100V 66A/45A 8SOP
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TPH6R30ANL,L1Q PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:66A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.3mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 54W (Tc)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:8-SOP Advance (5x5)
Package / Case:8-PowerVDFN
More Information
TPH6R30ANL,L1Q
TPH6R30ANL,L1Q
Toshiba Electronic Devices and Storage Corporation TPH6R30ANL,L1Q is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TPH6R30ANL,L1Q PDF
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