SI8821EDB-T2-E1

Manufacturer Part SI8821EDB-T2-E1
Manufacturer Vishay / Siliconix
Description MOSFET P-CH 30V 4MICROFOOT
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SI8821EDB-T2-E1 PDF
Availability 194 pieces
Shipped from HK warehouse
Expected Shipping Nov 28 - Dec 02 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:135mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 15 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Microfoot
Package / Case:4-XFBGA, CSPBGA
More Information
SI8821EDB-T2-E1
SI8821EDB-T2-E1
Vishay / Siliconix SI8821EDB-T2-E1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SI8821EDB-T2-E1 PDF
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