IPT026N10N5ATMA1

Manufacturer Part IPT026N10N5ATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 100V 27A/202A 8HSOF
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 1810 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:OptiMOS™5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 150A, 10V
Vgs(th) (Max) @ Id:3.8V @ 158µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8800 pF @ 50 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
More Information
IPT026N10N5ATMA1
IPT026N10N5ATMA1
IR (Infineon Technologies) IPT026N10N5ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
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