IPN95R1K2P7ATMA1

Manufacturer Part IPN95R1K2P7ATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 950V 6A SOT223
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPN95R1K2P7ATMA1 PDF
Availability 1026 pieces
Shipped from HK warehouse
Expected Shipping Nov 28 - Dec 02 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id:3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:478 pF @ 400 V
FET Feature:-
Power Dissipation (Max):7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
More Information
IPN95R1K2P7ATMA1
IPN95R1K2P7ATMA1
IR (Infineon Technologies) IPN95R1K2P7ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPN95R1K2P7ATMA1 PDF
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