IPD15N06S2L64ATMA2

Manufacturer Part IPD15N06S2L64ATMA2
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 55V 19A TO252-31
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPD15N06S2L64ATMA2 PDF
Availability 1352 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:64mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:354 pF @ 25 V
FET Feature:-
Power Dissipation (Max):47W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
More Information
IPD15N06S2L64ATMA2
IPD15N06S2L64ATMA2
IR (Infineon Technologies) IPD15N06S2L64ATMA2 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPD15N06S2L64ATMA2 PDF
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