TPH4R50ANH,L1Q

Manufacturer Part TPH4R50ANH,L1Q
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N CH 100V 60A SOP ADV
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TPH4R50ANH,L1Q PDF
Availability 4699 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 50 V
FET Feature:-
Power Dissipation (Max):1.6W (Ta), 78W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP Advance (5x5)
Package / Case:8-PowerVDFN
More Information
TPH4R50ANH,L1Q
TPH4R50ANH,L1Q
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Documents
Datasheet
TPH4R50ANH,L1Q PDF
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