N0412N-S19-AY

Manufacturer Part N0412N-S19-AY
Manufacturer Renesas Electronics America
Description MOSFET N-CH 40V 100A TO220
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet N0412N-S19-AY PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Apr 07 - Apr 11 2025
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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta), 119W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
More Information
N0412N-S19-AY
N0412N-S19-AY
Renesas Electronics America N0412N-S19-AY is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
N0412N-S19-AY PDF
Same Series
N0412N-S19-AY
N0412N-S19-AY
MOSFET N-CH 40V 100A TO220
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MOSFET N-CH 40V 100A TO263
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