TK3A60DA(Q,M)

Manufacturer Part TK3A60DA(Q,M)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 600V 2.5A TO220SIS
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TK3A60DA(Q,M) PDF
Availability 39 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:π-MOSVII
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 25 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220SIS
Package / Case:TO-220-3 Full Pack
More Information
TK3A60DA(Q,M)
TK3A60DA(Q,M)
Toshiba Electronic Devices and Storage Corporation TK3A60DA(Q,M) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TK3A60DA(Q,M) PDF
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MOSFET N-CH 600V 2.5A TO220SIS

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