FQB3N60CTM

Manufacturer Part FQB3N60CTM
Manufacturer Rochester Electronics
Description MOSFET N-CH 600V 3A D2PAK
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet FQB3N60CTM PDF
Availability 1376 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:565 pF @ 25 V
FET Feature:-
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
More Information
FQB3N60CTM
FQB3N60CTM
Rochester Electronics FQB3N60CTM is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
FQB3N60CTM PDF
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