G2R1000MT33J

Manufacturer Part G2R1000MT33J
Manufacturer GeneSiC Semiconductor
Description SIC MOSFET N-CH 4A TO263-7
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 1130 pieces
Shipped from HK warehouse
Expected Shipping Dec 19 - Dec 23 2024
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Product Attributes
Type Description
Series:G2R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):3300 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 20 V
Vgs (Max):+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:238 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
More Information
G2R1000MT33J
G2R1000MT33J
GeneSiC Semiconductor G2R1000MT33J is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
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