TPH2R408QM,L1Q

Manufacturer Part TPH2R408QM,L1Q
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 80V 120A 8SOP
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:U-MOSX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.43mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8300 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 210W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-SOP Advance (5x5)
Package / Case:8-PowerVDFN
More Information
TPH2R408QM,L1Q
TPH2R408QM,L1Q
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