TK40E10N1,S1X

Manufacturer Part TK40E10N1,S1X
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N CH 100V 90A TO220
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TK40E10N1,S1X PDF
Availability 3 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:U-MOSVIII-H
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 50 V
FET Feature:-
Power Dissipation (Max):126W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
More Information
TK40E10N1,S1X
TK40E10N1,S1X
Toshiba Electronic Devices and Storage Corporation TK40E10N1,S1X is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TK40E10N1,S1X PDF
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