IPD100N06S403ATMA1

Manufacturer Part IPD100N06S403ATMA1
Manufacturer Rochester Electronics
Description MOSFET N-CH 60V 100A TO252-31
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPD100N06S403ATMA1 PDF
Availability 16526 pieces
Shipped from HK warehouse
Expected Shipping Dec 19 - Dec 23 2024
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Product Attributes
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:128 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10.4 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
More Information
IPD100N06S403ATMA1
IPD100N06S403ATMA1
Rochester Electronics IPD100N06S403ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPD100N06S403ATMA1 PDF
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