SISS63DN-T1-GE3

Manufacturer Part SISS63DN-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET P-CH 20V 35.1/127.5A PPAK
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 55673 pieces
Shipped from HK warehouse
Expected Shipping Nov 26 - Nov 30 2024
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Product Attributes
Type Description
Series:TrenchFET® Gen III
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:35.1A (Ta), 127.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:236 nC @ 8 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:7080 pF @ 10 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 65.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S
Package / Case:PowerPAK® 1212-8S
More Information
SISS63DN-T1-GE3
SISS63DN-T1-GE3
Vishay / Siliconix SISS63DN-T1-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
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MOSFET P-CH 20V 35.1/127.5A PPAK

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