TPH1R306P1,L1Q

Manufacturer Part TPH1R306P1,L1Q
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 60V 100A 8SOP
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 26 - Nov 30 2024
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Product Attributes
Type Description
Series:U-MOSIX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.28mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):960mW (Ta), 170W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-SOP Advance (5x5)
Package / Case:8-PowerVDFN
More Information
TPH1R306P1,L1Q
TPH1R306P1,L1Q
Toshiba Electronic Devices and Storage Corporation TPH1R306P1,L1Q is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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