IRFS31N20DTRLP

Manufacturer Part IRFS31N20DTRLP
Manufacturer Rochester Electronics
Description HEXFET N-CHANNEL POWER MOSFET
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IRFS31N20DTRLP PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 19 - Dec 23 2024
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Product Attributes
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2.37 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
More Information
IRFS31N20DTRLP
IRFS31N20DTRLP
Rochester Electronics IRFS31N20DTRLP is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IRFS31N20DTRLP PDF
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