TK18E10K3,S1X(S

Manufacturer Part TK18E10K3,S1X(S
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 100V 18A TO220-3
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TK18E10K3,S1X(S PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:U-MOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:42mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
More Information
TK18E10K3,S1X(S
TK18E10K3,S1X(S
Toshiba Electronic Devices and Storage Corporation TK18E10K3,S1X(S is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TK18E10K3,S1X(S PDF
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MOSFET N-CH 100V 18A TO220-3

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