GA10JT12-263

Manufacturer Part GA10JT12-263
Manufacturer GeneSiC Semiconductor
Description TRANS SJT 1200V 25A
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet GA10JT12-263 PDF
Availability 170 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:120mOhm @ 10A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:1403 pF @ 800 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:-
Package / Case:-
More Information
GA10JT12-263
GA10JT12-263
GeneSiC Semiconductor GA10JT12-263 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
GA10JT12-263 PDF
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