Manufacturer Part | GA10JT12-263 |
---|---|
Manufacturer | GeneSiC Semiconductor |
Description | TRANS SJT 1200V 25A |
Category | Discrete Semiconductor |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Datasheet | GA10JT12-263 PDF |
Availability | 170 pieces |
Shipped from | HK warehouse |
Expected Shipping | Nov 25 - Nov 29 2024 |
In Stock Min.: 1 Mult.: 1
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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | - |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 120mOhm @ 10A |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 1403 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 170W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | - |
Package / Case: | - |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |