R6009ENX

Manufacturer Part R6009ENX
Manufacturer ROHM Semiconductor
Description MOSFET N-CH 600V 9A TO220FM
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet R6009ENX PDF
Availability 400 pieces
Shipped from HK warehouse
Expected Shipping Dec 13 - Dec 17 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:535mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FM
Package / Case:TO-220-3 Full Pack
More Information
R6009ENX
R6009ENX
ROHM Semiconductor R6009ENX is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
R6009ENX PDF
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