RT1C060UNTR

Manufacturer Part RT1C060UNTR
Manufacturer ROHM Semiconductor
Description MOSFET N-CH 20V 6A 8TSST
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet RT1C060UNTR PDF
Availability 2625 pieces
Shipped from HK warehouse
Expected Shipping Dec 06 - Dec 10 2024
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:28mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 10 V
FET Feature:-
Power Dissipation (Max):650mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSST
Package / Case:8-SMD, Flat Lead
More Information
RT1C060UNTR
RT1C060UNTR
ROHM Semiconductor RT1C060UNTR is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
RT1C060UNTR PDF
Same Series
RT1C060UNTR
RT1C060UNTR
MOSFET N-CH 20V 6A 8TSST
ROHM Semiconductor
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