TK100L60W,VQ

Manufacturer Part TK100L60W,VQ
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 600V 100A TO3P
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TK100L60W,VQ PDF
Availability 66 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:360 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:15000 pF @ 30 V
FET Feature:Super Junction
Power Dissipation (Max):797W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P(L)
Package / Case:TO-3PL
More Information
TK100L60W,VQ
TK100L60W,VQ
Toshiba Electronic Devices and Storage Corporation TK100L60W,VQ is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TK100L60W,VQ PDF
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