SSM3J35MFV,L3F

Manufacturer Part SSM3J35MFV,L3F
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET P-CH 20V 100MA VESM
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SSM3J35MFV,L3F PDF
Availability 7746 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:8Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:12.2 pF @ 3 V
FET Feature:-
Power Dissipation (Max):150mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:VESM
Package / Case:SOT-723
More Information
SSM3J35MFV,L3F
SSM3J35MFV,L3F
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Documents
Datasheet
SSM3J35MFV,L3F PDF
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