SI2308BDS-T1-GE3

Manufacturer Part SI2308BDS-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 60V 2.3A SOT23-3
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SI2308BDS-T1-GE3 PDF
Availability 39614 pieces
Shipped from HK warehouse
Expected Shipping Nov 26 - Nov 30 2024
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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 30 V
FET Feature:-
Power Dissipation (Max):1.09W (Ta), 1.66W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
More Information
SI2308BDS-T1-GE3
SI2308BDS-T1-GE3
Vishay / Siliconix SI2308BDS-T1-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SI2308BDS-T1-GE3 PDF
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