SPB04N60C3ATMA1

Manufacturer Part SPB04N60C3ATMA1
Manufacturer Rochester Electronics
Description MOSFET N-CH 650V 4.5A TO263-3-2
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SPB04N60C3ATMA1 PDF
Availability 54444 pieces
Shipped from HK warehouse
Expected Shipping Dec 20 - Dec 24 2024
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Product Attributes
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:3.9V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
More Information
SPB04N60C3ATMA1
SPB04N60C3ATMA1
Rochester Electronics SPB04N60C3ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SPB04N60C3ATMA1 PDF
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