TK6Q65W,S1Q

Manufacturer Part TK6Q65W,S1Q
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 650V 5.8A IPAK
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TK6Q65W,S1Q PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 24 - Dec 28 2024
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Product Attributes
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 300 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
More Information
TK6Q65W,S1Q
TK6Q65W,S1Q
Toshiba Electronic Devices and Storage Corporation TK6Q65W,S1Q is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TK6Q65W,S1Q PDF
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TK6Q65W,S1Q
TK6Q65W,S1Q
MOSFET N-CH 650V 5.8A IPAK
Toshiba Electronic Devices and Storage Corporation
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