BSM600C12P3G201

Manufacturer Part BSM600C12P3G201
Manufacturer ROHM Semiconductor
Description SICFET N-CH 1200V 600A MODULE
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 3 pieces
Shipped from HK warehouse
Expected Shipping Dec 06 - Dec 10 2024
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Product Attributes
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:600A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds:28000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2460W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:Module
Package / Case:Module
More Information
BSM600C12P3G201
BSM600C12P3G201
ROHM Semiconductor BSM600C12P3G201 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Same Series
BSM600C12P3G201
BSM600C12P3G201
SICFET N-CH 1200V 600A MODULE
ROHM Semiconductor
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