SQJ411EP-T1_GE3

Manufacturer Part SQJ411EP-T1_GE3
Manufacturer Vishay / Siliconix
Description MOSFET P-CH 12V 60A PPAK SO-8
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SQJ411EP-T1_GE3 PDF
Availability 1471 pieces
Shipped from HK warehouse
Expected Shipping Nov 26 - Nov 30 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:9100 pF @ 6 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
More Information
SQJ411EP-T1_GE3
SQJ411EP-T1_GE3
Vishay / Siliconix SQJ411EP-T1_GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SQJ411EP-T1_GE3 PDF
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