FCP190N60E

Manufacturer Part FCP190N60E
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description MOSFET N-CH 600V 20.6A TO220-3
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet FCP190N60E PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 24 - Dec 28 2024
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Product Attributes
Type Description
Series:SuperFET® II
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3175 pF @ 25 V
FET Feature:-
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
More Information
FCP190N60E
FCP190N60E
Sanyo Semiconductor/ON Semiconductor FCP190N60E is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
FCP190N60E PDF
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FCP190N60E

FCP190N60E

MOSFET N-CH 600V 20.6A TO220-3

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