IPB80N06S2H5ATMA1

Manufacturer Part IPB80N06S2H5ATMA1
Manufacturer Rochester Electronics
Description MOSFET N-CH 55V 80A TO263-3-2
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IPB80N06S2H5ATMA1 PDF
Availability 12518 pieces
Shipped from HK warehouse
Expected Shipping Dec 20 - Dec 24 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4.4 pF @ 25 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
More Information
IPB80N06S2H5ATMA1
IPB80N06S2H5ATMA1
Rochester Electronics IPB80N06S2H5ATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IPB80N06S2H5ATMA1 PDF
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EMS 3-7 days
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MOSFET N-CH 55V 80A TO263-3-2

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