| Manufacturer Part | IMW120R350M1HXKSA1 |
|---|---|
| Manufacturer | IR (Infineon Technologies) |
| Description | SICFET N-CH 1.2KV 4.7A TO247-3 |
| Category | Discrete Semiconductor |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Availability | 160 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Nov 24 - Nov 28 2024 |
In Stock Min.: 1 Mult.: 1
Not satisfied with the price? Want a lower wholesale price? Please send RFQ, and we will respond immediately
| Type | Description |
|---|---|
| Series: | CoolSiC™ |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss): | 1.2 kV |
| Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 15V, 18V |
| Rds On (Max) @ Id, Vgs: | 455mOhm @ 2A, 18V |
| Vgs(th) (Max) @ Id: | 5.7V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 5.3 nC @ 18 V |
| Vgs (Max): | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds: | 182 pF @ 800 V |
| FET Feature: | - |
| Power Dissipation (Max): | 60W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO247-3-41 |
| Package / Case: | TO-247-3 |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
CAP ALUM 180UF 50V 2000H
SICFET N-CH 1.2KV 4.7A TO247-3
