SIHG21N65EF-GE3

Manufacturer Part SIHG21N65EF-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 650V 21A TO247AC
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SIHG21N65EF-GE3 PDF
Availability 440 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2322 pF @ 100 V
FET Feature:-
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
More Information
SIHG21N65EF-GE3
SIHG21N65EF-GE3
Vishay / Siliconix SIHG21N65EF-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SIHG21N65EF-GE3 PDF
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